二硒化鉿晶體(百分之99.995)HfSe2
參考價 | 面議 |
- 公司名稱 上海巨納科技有限公司
- 品牌
- 型號
- 所在地
- 廠商性質 經銷商
- 更新時間 2020/12/26 20:55:33
- 訪問次數 343
聯系方式:袁經理 13761090949 查看聯系方式
聯系我們時請說明是儀器網上看到的信息,謝謝!
參考價 | 面議 |
聯系方式:袁經理 13761090949 查看聯系方式
聯系我們時請說明是儀器網上看到的信息,謝謝!
二硒化鉿晶體 HfSe2(Hafnium Selenide)晶體尺寸:~10毫米電學性能:半導體晶體結構:六邊形晶胞參數:a = b = 0.3745 nm, c = 0.6160 nm, α = β = 90#176;, γ = 120#176;晶體類型:合成晶體純度:>99.995%
二硒化鉿晶體 HfSe2(Hafnium Selenide)
晶體尺寸:~10毫米
電學性能:半導體
晶體結構:六邊形
晶胞參數:a = b = 0.3745 nm, c = 0.6160 nm, α = β = 90°, γ = 120°
晶體類型:合成
晶體純度:>99.995%
X-ray diffraction on a Hafnium Diselenide single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 3, 4, 5
Powder X-ray diffraction (XRD) of a single crystal HfSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal HfSe2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal HfSe2. Measurement was performed with a 785 nm Raman system at room temperature.
*您想獲取產品的資料:
個人信息: